Deposition of InN thin films by radio frequency magnetron sputtering

被引：37

作者：

Guo, QX ^{[1
]}

Shingai, N ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 840, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

InN; glass substrate; RF magnetron sputtering; deposition; substrate temperature;

D O I：

10.1016/S0022-0248(98)00332-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InN thin films were deposited on glass substrates by radio frequency magnetron sputtering. It was found that the c-axis of InN is perpendicular to the surface plane. All films show n-type conduction with a carrier concentration of the order 10(20) cm(-3). The Hall mobility of the films increases monotonically from 18 cm(2)/V.s a fur films deposited at a substrate temperature of 100 degrees C to 115 cm(2)/V.s at 500 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：466 / 470

页数：5

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