Local density of states in zero-dimensional semiconductor structures

被引：39

作者：

Kanisawa, K

Butcher, MJ

Tokura, Y

Yamaguchi, H

Hirayama, Y

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[3] JST, CREST, Kawaguchi, Saitama 3310012, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.87.196804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.

引用

页数：4

共 16 条

[11] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].