Fast and reliable identification of atomically thin layers of TaSe2 crystals

被引：58

作者：

Castellanos-Gomez, Andres ^{[1
]}

Navarro-Moratalla, Efren ^{[2
]}

Mokry, Guillermo ^{[3
]}

Quereda, Jorge ^{[3
]}

Pinilla-Cienfuegos, Elena ^{[2
]}

Agrait, Nicolas ^{[3
,4
]}

van der Zant, Herre S. J. ^{[1
]}

Coronado, Eugenio ^{[2
]}

Steele, Gary A. ^{[1
]}

Rubio-Bollinger, Gabino ^{[3
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Univ Valencia, Inst Ciencia Mol ICMol, E-46980 Paterna, Spain

[3] Univ Autonoma Madrid, Dept Fis Mat Condensada C3, E-28049 Madrid, Spain

[4] Inst Madrileno Estudios Avanzados Nanociencia IMD, E-28049 Madrid, Spain

来源：

NANO RESEARCH | 2013年 / 6卷 / 03期

关键词：

atomically thin layer; metal dichalcogenide; layered superconductor; TaSe2; optical microscopy; Raman spectroscopy; SINGLE-LAYER; OPTICAL-IDENTIFICATION; RAMAN-SPECTROSCOPY; LARGE-AREA; MOS2; GRAPHENE; TRANSITION; GRAPHITE; GROWTH;

D O I：

10.1007/s12274-013-0295-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves.

引用

页码：191 / 199

页数：9

共 47 条

[1] Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides [J].