Large area liquid crystal monodomain field-effect transistors

被引:205
作者
van Breemen, AJJM
Herwig, PT
Chlon, CHT
Sweelssen, J
Schoo, HFM
Setayesh, S
Hardeman, WM
Martin, CA
de Leeuw, DM
Valeton, JJP
Bastiaansen, CWM
Broer, DJ
Popa-Merticaru, AR
Meskers, SCJ
机构
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Fac Chem & Chem Engn, Dept Polymer Technol, NL-5600 MB Eindhoven, Netherlands
[3] Eindhoven Univ Technol, Lab Macromol & Organ Chem, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1021/ja055337l
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Butyl, hexyl, and decyl derivatives of the liquid-crystal line organic semiconductor 5,5 double prime -bis(5alkyl-2-thienylethynyl)-2,2':5',2double prime -terthiophene were synthesized and studied with respect to their structural, optical, and electrical properties. By means of an optimized thermal annealing scheme the hexyl and decyl compounds could be processed into self-assembled monodomain films of up to 150 mm in diameter. These were investigated with X-ray diffractometry, which revealed a clearly single-crystalline monoclinic morphology with lamellae parallel to the substrate. Within the lamellae the molecules were found to arrange with a tilt of about 50 degrees with the rubbing direction of the polyimide alignment layer. The resulting, close side-to-side packing was confirmed by measurements of the UV/vis absorption, which showed a dichroic ratio of 19 and indicated H-aggregation. AFM analyses revealed self-affinity in the surface roughness of the monodomain. The compounds showed bipolar charge transport in TOF measurements, with hole mobilities reaching up to 0.02 cm(2)/Vs and maximum electron mobilities around 0.002 cm(2)/Vs. The hexyl derivative was processed into large-area monodomain top-gate field-effect transistors, which were stable for months and showed anisotropic hole mobilities of up to 0.02 cm(2)/Vs. Compared to multidomain bottom-gate transistors the monodomain formation allowed for a mobility increase by 1 order of magnitude.
引用
收藏
页码:2336 / 2345
页数:10
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