Influence of molecule dwell time on μc-Si:H properties

被引：3

作者：

Coscia, U

Ambrosone, G

Maddalena, P

Lettieri, S

Ambrico, M

Minarini, C

机构：

[1] Univ Naples Federico II, INFM, Dipartimento Sci Fis, I-80126 Naples, Italy

[2] CNR, CSCP, I-70126 Bari, Italy

[3] ENEA, I-80055 Portici, NA, Italy

来源：

THIN SOLID FILMS | 2002年 / 403卷

关键词：

microcrystalline silicon; optical absorption; conductivity;

D O I：

10.1016/S0040-6090(01)01565-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated microcrystalline silicon (muc-Si:H) films have been prepared by plasma-enhanced chemical vapour deposition (PECVD) from a mixture of silane highly diluted in hydrogen. The effect of the molecule dwell time on the deposition rate and on the electrical and structural properties has been investigated. The molecule dwell time appears to control orientation and grain size. Highly conductive muc-Si:H films with a rough surface have been grown at a high deposition rate at higher molecule dwell time in an appropriate silane concentration. These films show an enhancement of the optical absorption in the near-infrared region suitable for photovoltaic applications. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 134

页数：5