Direct evidence for the STM observation of CuO2 plane in Bi2Sr2CaCu2O8+x and possibility of new tunnel transistor operation

被引：5

作者：

Nishiyama, M

Ogawa, K

Mochiku, T

Kadowaki, K

机构：

[1] NATL RES INST MET,TSUKUBA,IBARAKI 305,JAPAN

[2] UNIV TSUKUBA,TSUKUBA,IBARAKI 305,JAPAN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 41卷 / 01期

关键词：

scanning tunneling microscope; cleavage plane; crystal structure;

D O I：

10.1016/S0921-5107(96)01631-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of Bi2Sr2CaCu2O8+x(Bi2212) were cleaved in air and the resultant cleavage plane, i.e. BiO plane was observed with an ultrahigh vacuum scanning tunnelling microscope (UHV-STM) at room temperature. Missing atom rows were found to be introduced deliberately along the ridges of the modulated BiO plane by increasing the cleaving rate. Noting that the missing atom row is a feature marked on the BiO plane, first direct evidence was obtained for the STM observation of the CuO2 plane where the magnitude of the sample bias voltage was reduced less than 0.1 eV. Based on this observation, we shall propose a new type of atom scale tunnel transistor.

引用

页码：93 / 97

页数：5

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