MBPCA application for fault detection in NMOS fabrication

被引:3
作者
Lachman-Shalem, S [1 ]
Haimovitch, N
Shauly, EN
Lewin, DR
机构
[1] Technion Israel Inst Technol, Dept Chem Engn, PSE Res Grp, IL-32000 Haifa, Israel
[2] Tower Semicond Ltd, IL-10556 Migdal Ha Emek, Israel
[3] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
基金
以色列科学基金会;
关键词
model-based fault diagnosis; model-based PCA; NMOS device fabrication;
D O I
10.1109/66.983445
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper describes the application of model-based principal component analysis (MBPCA) to the identification and isolation of faults in NMOS manufacture. In MBPCA, multivariate statistics are applied to the analysis of the portion of the data variance that is unexplained by models based on material and energy balances carried out on the unit operations used in manufacture. It is demonstrated that the failure detection and isolation performance achievable using the model-based procedure exceeds that of commonly used univariate SPC or conventional PCA approaches.
引用
收藏
页码:60 / 70
页数:11
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