Hole Doping to Aligned Single-Walled Carbon Nanotubes from Sapphire Substrate Induced by Heat Treatment

被引：4

作者：

Ago, Hiroki ^{[1
,2
,3
]}

Tanaka, Izumi ^{[1
]}

Tsuji, Masaharu ^{[1
,2
]}

Ikeda, Ken-ichi ^{[2
]}

Mizuno, Seigi ^{[2
]}

机构：

[1] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan

[2] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 47期

关键词：

D O I：

10.1021/jp806003a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied the effects of heat treatment on single-walled carbon nanotubes (SWNTs) aligned on a sapphire ((alpha-Al2O3) substrate to understand the interaction between the SWNTs and sapphire. The Raman measurements showed a clear upshift of the G-band after heat treatment at 1000 degrees C in a high vacuum. Furthermore, Auger spectroscopy showed an increase of the [Al]/[O] atomic ratio of the sapphire surface upon heat treatment, indicating the removal of oxygen atoms from the sapphire surface. The observed upshift of the G-band is accounted for by the hole doping to the aligned SWNTs from the oxygen-deficient sapphire substrate. This annealing-induced carrier doping from the underlying substrate would offer a new and unique approach to modify the electronic structure of SWNTs.

引用

页码：18350 / 18354

页数：5

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