Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures

被引：32

作者：

Choi, Chang Woo ^{[1
]}

Prabu, Arun Anand ^{[1
]}

Kim, Yu Min ^{[1
]}

Yoon, Sun ^{[1
]}

Kim, Kap Jin ^{[1
]}

Park, Cheolmin ^{[2
]}

机构：

[1] Kyung Hee Univ, Coll Environm & Appl Chem, Dept Adv Polymer & Fiber Mat, Yongin 446701, Gyeonggi Do, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

关键词：

ferroelectric thin films; MFIS structures; nanostructured materials; polymer blends; polymer films; random-access storage;

D O I：

10.1063/1.3013835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (72/28 mol %)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100 nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric-metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.

引用

页数：3

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