Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret

被引：292

作者：

Baeg, Kang-Jun

Noh, Yong-Young

Ghim, Jieun

Kang, Seok-Ju

Lee, Hyemi

Kim, Dong-Yu

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Ctr Frontier Mat, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[2] Univ Cambridge, Cavendish Lab, OE Grp, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 23期

关键词：

D O I：

10.1002/adma.200601434

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.

引用

页码：3179 / +

页数：6

共 33 条

[1] The physics of ferroelectric memories [J].

Auciello, O ;

Scott, JF ;

Ramesh, R .

PHYSICS TODAY, 1998, 51 (07) :22-27

[2] Pentacene-based radio-frequency identification circuitry [J].

Baude, PF ;

Ender, DA ;

Haase, MA ;

Kelley, TW ;

Muyres, DV ;

Theiss, SD .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966

[3] Introduction to Flash memory [J].

Bez, R ;

Camerlenghi, E ;

Modelli, A ;

Visconti, A .

PROCEEDINGS OF THE IEEE, 2003, 91 (04) :489-502

[4] Organic donor-acceptor system exhibiting electrical bistability for use in memory devices [J].

Chu, CW ;

Ouyang, J ;

Tseng, HH ;

Yang, Y .

ADVANCED MATERIALS, 2005, 17 (11) :1440-+

[5]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[6]

2-9

[7] The path to ubiquitous and low-cost organic electronic appliances on plastic [J].

Forrest, SR .

NATURE, 2004, 428 (6986) :911-918

[8] Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density [J].

Goldmann, C ;

Krellner, C ;

Pernstich, KP ;

Haas, S ;

Gundlach, DJ ;

Batlogg, B .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)

[9] High-performance emerging solid-state memory technologies [J].

Goronkin, H ;

Yang, Y .

MRS BULLETIN, 2004, 29 (11) :805-808

[10] Organic field-effect transistors with polarizable gate insulators [J].

Katz, HE ;

Hong, XM ;

Dodabalapur, A ;

Sarpeshkar, R .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (03) :1572-1576

← 1 2 3 4 →