Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret

被引：292

作者：

Baeg, Kang-Jun

Noh, Yong-Young

Ghim, Jieun

Kang, Seok-Ju

Lee, Hyemi

Kim, Dong-Yu

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Ctr Frontier Mat, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

[2] Univ Cambridge, Cavendish Lab, OE Grp, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 23期

关键词：

D O I：

10.1002/adma.200601434

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.

引用

页码：3179 / +

页数：6

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