All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator

被引：185

作者：

Schroeder, R ^{[1
]}

Majewski, LA ^{[1
]}

Grell, M ^{[1
]}

机构：

[1] Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 07期

关键词：

D O I：

10.1002/adma.200306187

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An all-organic memory transistor ("FerrOFET") with a solution-deposited ferroelectric-like nylon gate insulator is demonstrated. Cheaper and easier to build than inorganic ferroelectric transistors, yet with comparable performance and compatible with flexible substrates, this device is suitable for most information storage organic electronics applications. The Figure shows the memory function of the FerrOFET as hysteresis in the transfer characteristics.

引用

页码：633 / +

页数：5

共 25 条

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