Is there an immortal memory?

被引：182

作者：

Scott, JC ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

SCIENCE | 2004年 / 304卷 / 5667期

关键词：

D O I：

10.1126/science.1095520

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

[No abstract available]

引用

页码：62 / 63

页数：2

共 13 条

[1] Bistable molecular conductors with a field-switchable dipole group [J].

Kornilovitch, PE ;

Bratkovsky, AM ;

Williams, RS .

PHYSICAL REVIEW B, 2002, 66 (24) :1-7

[2] Molecular analogue memory cell based on electrical switching and memory in molecular thin films [J].

Krieger, JH ;

Trubin, SV ;

Vaschenko, SB ;

Yudanov, NF .

SYNTHETIC METALS, 2001, 122 (01) :199-202

[3]

Ma D, 2000, ADV MATER, V12, P1063, DOI 10.1002/1521-4095(200007)12:14<1063::AID-ADMA1063>3.0.CO

[4]

2-9

[5] Nonvolatile electrical bistability of organic/metal-nanocluster/organic system [J].

Ma, LP ;

Pyo, S ;

Ouyang, J ;

Xu, QF ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (09) :1419-1421

[6] Chalcogenide-based non-volatile memory technology [J].

Maimon, J ;

Spall, E ;

Quinn, R ;

Schnur, S .

2001 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOLS 1-7, 2001, :2289-2294

[7] Silver incorporation in Ge-Se glasses used in programmable metallization cell devices [J].

Mitkova, M ;

Kozicki, MN .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :1023-1027

[8] A polymer/semiconductor write-once read-many-times memory [J].

Möller, S ;

Perlov, C ;

Jackson, W ;

Taussig, C ;

Forrest, SR .

NATURE, 2003, 426 (6963) :166-169

[9] Magnetically engineered spintronic sensors and memory [J].

Parkin, S ;

Jiang, X ;

Kaiser, C ;

Panchula, A ;

Roche, K ;

Samant, M .

PROCEEDINGS OF THE IEEE, 2003, 91 (05) :661-680

[10] Molecular random access memory cell [J].

Reed, MA ;

Chen, J ;

Rawlett, AM ;

Price, DW ;

Tour, JM .

APPLIED PHYSICS LETTERS, 2001, 78 (23) :3735-3737

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