Molecular analogue memory cell based on electrical switching and memory in molecular thin films

被引：25

作者：

Krieger, JH ^{[1
]}

Trubin, SV ^{[1
]}

Vaschenko, SB ^{[1
]}

Yudanov, NF ^{[1
]}

机构：

[1] Inst Inorgan Chem, Novosibirsk 630090, Russia

来源：

SYNTHETIC METALS | 2001年 / 122卷 / 01期

关键词：

memory; switching; thin films;

D O I：

10.1016/S0379-6779(00)01354-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of a molecular memory cell with its work based on the phenomenon of structural instability of one-dimensional conductive molecular systems is offered. Electrophysical parameters of the molecular analogue memory cell were investigated. It was established that a memory cell has an S-shaped voltage-current characteristic with memory. Any impedance of the memory cell can be obtained in the interval between similar to 10 Mn and similar to 100 Omega depending on the switching condition. A conclusion is drawn that the design of memory chips based on the molecular analogue memory cell is promising. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：199 / 202

页数：4

共 7 条

[1]

HAMANN C, 1990, INT J ELECTRON, V73, P1039

[2] Structural instability of one-dimensional systems as a physical principle underlying the functioning of molecular electronic devices [J].