BISTABLE SWITCHING IN ELECTROFORMED METAL-INSULATOR-METAL DEVICES

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] PULSE INVESTIGATION OF SWITCHING DELAYS IN VO2 COPLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 820 - +

[3] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J]. REVIEWS OF MODERN PHYSICS, 1978, 50 (02) : 209 - 220

[4] ADLER D, 1972, AMORPHOUS SEMICONDUC

[5] INFLUENCE OF ADSORPTION ON CURRENT-VOLTAGE CHARACTERISTICS OF DISCONTINUOUS METAL-FILMS [J]. THIN SOLID FILMS, 1982, 92 (03) : 253 - 258

[6] ALEKSEENKO BV, 1980, 3RD ALL UN S PROP SM, P97

[7] ALEKSEENKO BV, 1987, MAT SCI, V13, P161

[8] TEMPERATURE-DEPENDENCE OF VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AN ELECTROFORMED CU-SIOX-CU STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 559 - 563

[9] OBSERVATION AND COMPOSITIONAL STUDIES OF THE METALLIC CONDUCTING FILAMENTS IN THE LOW-RESISTANCE STATE (ON-STATE) OF SIO V2O5 THIN-FILMS USED AS MEMORY ELEMENTS [J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (06) : 1939 - 1946

[10] TEMPERATURE-DEPENDENCE OF THE ON STATE REGENERATION IN METAL-INSULATOR METAL DIODES [J]. THIN SOLID FILMS, 1983, 103 (03) : 283 - 293

[1] ABELES B, 1975, ADV PHYS, V24, P407, DOI 10.1080/00018737500101431

[2] PULSE INVESTIGATION OF SWITCHING DELAYS IN VO2 COPLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 820 - +

[3] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS [J]. REVIEWS OF MODERN PHYSICS, 1978, 50 (02) : 209 - 220

[4] ADLER D, 1972, AMORPHOUS SEMICONDUC

[5] INFLUENCE OF ADSORPTION ON CURRENT-VOLTAGE CHARACTERISTICS OF DISCONTINUOUS METAL-FILMS [J]. THIN SOLID FILMS, 1982, 92 (03) : 253 - 258

[6] ALEKSEENKO BV, 1980, 3RD ALL UN S PROP SM, P97

[7] ALEKSEENKO BV, 1987, MAT SCI, V13, P161

[8] TEMPERATURE-DEPENDENCE OF VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AN ELECTROFORMED CU-SIOX-CU STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 559 - 563

[9] OBSERVATION AND COMPOSITIONAL STUDIES OF THE METALLIC CONDUCTING FILAMENTS IN THE LOW-RESISTANCE STATE (ON-STATE) OF SIO V2O5 THIN-FILMS USED AS MEMORY ELEMENTS [J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (06) : 1939 - 1946

[10] TEMPERATURE-DEPENDENCE OF THE ON STATE REGENERATION IN METAL-INSULATOR METAL DIODES [J]. THIN SOLID FILMS, 1983, 103 (03) : 283 - 293