Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret

被引:292
作者
Baeg, Kang-Jun
Noh, Yong-Young
Ghim, Jieun
Kang, Seok-Ju
Lee, Hyemi
Kim, Dong-Yu
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Ctr Frontier Mat, Heeger Ctr Adv Mat, Kwangju 500712, South Korea
[2] Univ Cambridge, Cavendish Lab, OE Grp, Cambridge CB3 0HE, England
关键词
D O I
10.1002/adma.200601434
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.
引用
收藏
页码:3179 / +
页数:6
相关论文
共 33 条
[11]   Recent advances in semiconductor performance and printing processes for organic transistor-based electronics [J].
Katz, HE .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4748-4756
[12]   Recent progress in organic electronics: Materials, devices, and processes [J].
Kelley, TW ;
Baude, PF ;
Gerlach, C ;
Ender, DE ;
Muyres, D ;
Haase, MA ;
Vogel, DE ;
Theiss, SD .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4413-4422
[13]   Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].
Knipp, D ;
Street, RA ;
Völkel, A ;
Ho, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355
[14]  
MA L, 2003, APPL PHYS LETT
[15]   High capacitance organic field-effect transistors with modified gate insulator surface [J].
Majewski, LA ;
Schroeder, R ;
Grell, M ;
Glarvey, PA ;
Turner, ML .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5781-5787
[16]   Organic field-effect transistors with ultrathin modified gate insulator [J].
Majewski, LA ;
Grell, M .
SYNTHETIC METALS, 2005, 151 (02) :175-179
[17]   Low-voltage, high-performance organic field-effect transistors with an ultra-thin TiO2 layer as gate insulator [J].
Majewski, LA ;
Schroeder, R ;
Grell, M .
ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (06) :1017-1022
[18]   A polymer/semiconductor write-once read-many-times memory [J].
Möller, S ;
Perlov, C ;
Jackson, W ;
Taussig, C ;
Forrest, SR .
NATURE, 2003, 426 (6963) :166-169
[19]   High-performance solution-processed polymer ferroelectric field-effect transistors [J].
Naber, RCG ;
Tanase, C ;
Blom, PWM ;
Gelinck, GH ;
Marsman, AW ;
Touwslager, FJ ;
Setayesh, S ;
De Leeuw, DM .
NATURE MATERIALS, 2005, 4 (03) :243-248
[20]   Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance [J].
Noh, YY ;
Kim, DY ;
Yase, K .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)