Organic field-effect transistors with ultrathin modified gate insulator

In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar(R) films covered by ultrathin (similar to 3.5 nm) SiO2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (<-1 V) assuring normally "off" transistor operation, very low inverse subthreshold slopes (pentacene: 255 mV/dec, rr-P3HT: 375 mV/dec), good carrier mobility (pentacene: 0.12 cm(2)/(V s), rr-P3HT: 0.01 cm(2)/(V s)) and a very small hysteresis. The performance of the presented OFETs is high enough for many commercial applications significantly reducing costs of their production. (C) 2005 Elsevier B.V. All rights reserved.