High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

被引：188

作者：

Chua, LL ^{[1
]}

Ho, PKH ^{[1
]}

Sirringhaus, H ^{[1
]}

Friend, RH ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1710716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a thermal-crosslinkable siloxane bisbenzocyclobutene, high quality spin-on (solutionprocessable) gate dielectric layers as thin as 50 nm have been fabricated over the semiconductor layer for polymer field-effect transistors. This was demonstrated on a poly(9,9-dialkylfluorene-alt-triarylamine) as p-channel semiconductor, with a surfactantion-exchanged poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate complex as top-gate electrode. The devices operate at a low voltage with a field-effect mobility of few 10(-4) cm(2)/Vs, and can be continuously operated at 120 degreesC. (C) 2004 American Institute of Physics.

引用

页码：3400 / 3402

页数：3

共 13 条

[1] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS [J].

BROWN, AR ;

POMP, A ;

HART, CM ;

DELEEUW, DM .

SCIENCE, 1995, 270 (5238) :972-974

[2] Device scaling limits of Si MOSFETs and their application dependencies [J].

Frank, DJ ;

Dennard, RH ;

Nowak, E ;

Solomon, PM ;

Taur, Y ;

Wong, HSP .

PROCEEDINGS OF THE IEEE, 2001, 89 (03) :259-288

[3] MOLECULAR ENGINEERING OF ORGANIC SEMICONDUCTORS - DESIGN OF SELF-ASSEMBLY PROPERTIES IN CONJUGATED THIOPHENE OLIGOMERS [J].

GARNIER, F ;

YASSAR, A ;

HAJLAOUI, R ;

HOROWITZ, G ;

DELOFFRE, F ;

SERVET, B ;

RIES, S ;

ALNOT, P .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1993, 115 (19) :8716-8721

[4] High-performance all-polymer integrated circuits [J].

Gelinck, GH ;

Geuns, TCT ;

de Leeuw, DM .

APPLIED PHYSICS LETTERS, 2000, 77 (10) :1487-1489

[5]

Groenendaal BL, 2000, ADV MATER, V12, P481, DOI 10.1002/(SICI)1521-4095(200004)12:7<481::AID-ADMA481>3.0.CO

[6]

2-C

[7] High-mobility organic thin-film transistors based on α,α′-didecyloligothiophenes [J].

Halik, M ;

Klauk, H ;

Zschieschang, U ;

Schmid, G ;

Radlik, W ;

Ponomarenko, S ;

Kirchmeyer, S ;

Weber, W .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2977-2981

[8] Plastic transistors in active-matrix displays - The handling of grey levels by these large displays paves the way for electronic paper. [J].

Huitema, HEA ;

Gelinck, GH ;

van der Putten, JBPH ;

Kuijk, KE ;

Hart, CM ;

Cantatore, E ;

Herwig, PT ;

van Breemen, AJJM ;

de Leeuw, DM .

NATURE, 2001, 414 (6864) :599-599

[9] Evaluations and considerations for self-assembled monolayer field-effect transistors [J].

Kagan, CR ;

Afzali, A ;

Martel, R ;

Gignac, LM ;

Solomon, PM ;

Schrott, AG ;

Ek, B .

NANO LETTERS, 2003, 3 (02) :119-124

[10] Absence of strong gate effects in electrical measurements on phenylene-based conjugated molecules [J].

Lee, JO ;

Lientschnig, G ;

Wiertz, F ;

Struijk, M ;

Janssen, RAJ ;

Egberink, R ;

Reinhoudt, DN ;

Hadley, P ;

Dekker, C .

NANO LETTERS, 2003, 3 (02) :113-117

← 1 2 →