High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

被引：188

作者：

Chua, LL ^{[1
]}

Ho, PKH ^{[1
]}

Sirringhaus, H ^{[1
]}

Friend, RH ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1710716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a thermal-crosslinkable siloxane bisbenzocyclobutene, high quality spin-on (solutionprocessable) gate dielectric layers as thin as 50 nm have been fabricated over the semiconductor layer for polymer field-effect transistors. This was demonstrated on a poly(9,9-dialkylfluorene-alt-triarylamine) as p-channel semiconductor, with a surfactantion-exchanged poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate complex as top-gate electrode. The devices operate at a low voltage with a field-effect mobility of few 10(-4) cm(2)/Vs, and can be continuously operated at 120 degreesC. (C) 2004 American Institute of Physics.

引用

页码：3400 / 3402

页数：3