Electrical characterization of polymer-based FETs fabricated by spin-coating poly(3-alkylthiophene)s

被引：47

作者：

Deen, AJ ^{[1
]}

Kazemeini, MH

Haddlara, YM

Yu, HF

Vamvounis, G

Holdcroft, S

Woods, W

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada

[3] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

charge transport; electrical characterization of PFETs; organic transisors; polymer FET (PFET); polymer transistors; polymer transistor fabrication; thin-film transistors (TFTs); transport in polymer semiconductors;

D O I：

10.1109/TED.2004.837389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage (I-V) characteristics of two different polymer thin-film transistors (TFTs), based on spin-coating of poly(3-hexylthiophene)-P3HT and poly(3-hexadecylthiophene)-P3HDT, are studied. A model is developed to interpret the results and to explain the differences between these two polymers. Various parameters of the semiconducting polymers, including bulk mobility, field-effect mobility, trap density, and unintentional dopant concentration are estimated. The model takes into account the, domination of the bulk current over the channel current in the subthreshold regime as well as the effects of the depletion layer as parasitic resistances in series with the channel resistance. Furthermore, the effects of the films thickness on the electrical characteristics of these TFTs are discussed. Compared to the P3HT, the P3HDT-based TFT has a lower subthreshold slope, higher on current ratio, and higher field-effect mobility.

引用

页码：1892 / 1901

页数：10

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