A two-dimensional simulation of organic transistors

In this paper, we analyze the operation of organic thin-film transistors (TFT's) using two-dimensional (2-D) numerical simulation to: 1) validate the use of simple MOSFET theory to describe the above-threshold behavior; 2) clarify the subthreshold characteristics, and short-channel effects; and 3) illustrate the operation of organic bilayer devices. Our analysis clarifies a number of issues that can help in device design. We also point out differences between the material parameters used in Si-MOSFET and organic FET simulation, and discuss the circumstances under which a semiconductor device simulator can be used for the simulation of orgranic transistors.