A nonvolatile memory element based on an organic field-effect transistor

被引：180

作者：

Unni, KNN ^{[1
]}

de Bettignies, R ^{[1
]}

Dabos-Seignon, S ^{[1
]}

Nunzi, JM ^{[1
]}

机构：

[1] Univ Angers, CNRS, Lab Associe 6136, Equipe Rech Technol 15, F-49045 Angers, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.1788887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties. (C) 2004 American Institute of Physics.

引用

页码：1823 / 1825

页数：3

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