High-performance emerging solid-state memory technologies

被引:25
作者
Goronkin, H [1 ]
Yang, Y [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA USA
关键词
solid-state memory; storage technology;
D O I
10.1557/mrs2004.232
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article introduces the November 2004 issue of MRS Bulletin on the state of the art in solid-state memory and storage technologies. The memory business drives hundreds of billions of dollars in sales of electronic equipment per year. The incentive for continuing on the historical track outlined. by Moore's law is huge, and this challenge is driving considerable investment from governments around the world as well as in private industry and universities. The problem is this: recognizing that current approaches to semiconductor-based memory are limited, what new technologies can be introduced to continue or even accelerate the pace of complexity? The articles in this issue highlight several commercially available memories, as well as memory technologies that are still in the research and development stages. What will become apparent to the reader is the huge diversity of approaches to this problem.
引用
收藏
页码:805 / 808
页数:4
相关论文
共 7 条
[1]   A [2]catenane-based solid state electronically reconfigurable switch [J].
Collier, CP ;
Mattersteig, G ;
Wong, EW ;
Luo, Y ;
Beverly, K ;
Sampaio, J ;
Raymo, FM ;
Stoddart, JF ;
Heath, JR .
SCIENCE, 2000, 289 (5482) :1172-1175
[2]   Electronically configurable molecular-based logic gates [J].
Collier, CP ;
Wong, EW ;
Belohradsky, M ;
Raymo, FM ;
Stoddart, JF ;
Kuekes, PJ ;
Williams, RS ;
Heath, JR .
SCIENCE, 1999, 285 (5426) :391-394
[3]   Nonvolatile memory and programmable logic from molecule-gated nanowires [J].
Duan, XF ;
Huang, Y ;
Lieber, CM .
NANO LETTERS, 2002, 2 (05) :487-490
[4]   Nonvolatile electrical bistability of organic/metal-nanocluster/organic system [J].
Ma, LP ;
Pyo, S ;
Ouyang, J ;
Xu, QF ;
Yang, Y .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1419-1421
[5]   Comparison of electron-transfer and charge-retention characteristics of porphyrin-containing self-assembled monolayers designed for molecular information storage [J].
Roth, KM ;
Gryko, DT ;
Clausen, C ;
Li, JZ ;
Lindsey, JS ;
Kuhr, WG ;
Bocian, DF .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (34) :8639-8648
[6]   Magnetoresistive random access memory using magnetic tunnel junctions [J].
Tehrani, S ;
Slaughter, JM ;
Deherrera, M ;
Engel, BN ;
Rizzo, ND ;
Salter, J ;
Durlam, M ;
Dave, RW ;
Janesky, J ;
Butcher, B ;
Smith, K ;
Grynkewich, G .
PROCEEDINGS OF THE IEEE, 2003, 91 (05) :703-714
[7]   Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics [J].
Yoon, SM ;
Ishiwara, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) :2002-2008