Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

被引：43

作者：

Yoon, SM ^{[1
]}

Ishiwara, H

机构：

[1] R&D Assoc Future Electron Devices, Tokyo 1100014, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

关键词：

data retention; depolarization field; ferroelectric-gate FET; ferroelectric memory; 1T2C; SrBi2Ta2O9;

D O I：

10.1109/16.944189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET.

引用

页码：2002 / 2008

页数：7

共 20 条

[1] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].

DEARAUJO, CAP ;

CUCHIARO, JD ;

MCMILLAN, LD ;

SCOTT, MC ;

SCOTT, JF .

NATURE, 1995, 374 (6523) :627-629

[2] Properties of ferroelectric memory FET using Sr2(Ta, Nb)2O7 thin film [J].

Fujimori, Y ;

Nakamura, T ;

Kamisawa, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2285-2288

[3] Nebulized spray deposition of Pb(Zr, Ti)O-3 thin films [J].

Huang, CS ;

Tao, CS ;

Lee, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (10) :3556-3561

[4] Proposal of a single-transistor-cell-type ferroelectric memory using an SOI structure and experimental study on the interference problem in the write operation [J].

Ishiwara, H ;

Shimamura, T ;

Tokumitsu, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1655-1658

[5]

ISHIWARA H, 1998, INT C SSDM, P222

[6] A novel Ir/IrO2/Pt-PZT-Pt/IrO2/Ir capacitor for a highly reliable mega-scale FRAM [J].

Jung, D ;

Kim, H ;

Song, YJ ;

Jang, N ;

Koo, B ;

Lee, S ;

Park, S ;

Park, Y ;

Kim, K .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :801-804

[7] Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation [J].

Katoh, Y ;

Fujieda, S ;

Hayashi, Y ;

Kunio, T .

1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, :56-57

[8] Preparation of Bi4Ti3O12 thin film on Si(100) substrate using Bi2SiO5 buffer layer and its electric characterization [J].

Kijima, T ;

Matsunaga, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5171-5173

[9] Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes [J].

Migita, S ;

Xiong, SB ;

Sakamaki, K ;

Ota, H ;

Tarui, Y ;

Sakai, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (9B) :5505-5511

[10]

NAKAMURA N, 1995, ISSCC DIG TECH PAPER, P68

← 1 2 →