Epitaxial growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 thin films on Si and its application to metal-ferroelectric-insulator-semiconductor diodes

被引：8

作者：

Migita, S ^{[1
]}

Xiong, SB ^{[1
]}

Sakamaki, K ^{[1
]}

Ota, H ^{[1
]}

Tarui, Y ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 9B期

关键词：

ferroelectric thin film; epitaxy; Si; SrTiO3; CeO2; ZrO2; Bi4Ti3O12; pulsed laser deposition; molecular beam epitaxy;

D O I：

10.1143/JJAP.39.5505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Insulating buffer layers, CeO2/Ce0.12Zr0.88O2 and SrTiO3/Ce0.12Zr0.88O2 films, are grown on Si(001) substrates by the pulsed laser deposition technique, and ferroelectric Bi4Ti3O12 films are grown on these buffer layers by the molecular beam epitaxy technique. X-ray diffraction data show that the c-axes of the B4Ti3O12 films grown on CeO2/Ce0.12Zr0.88O2 and SrTiO3/CC0.12Zr0.88O2 buffer layers are normal and inclined 45 degrees to the buffer layer surface, respectively. Memory windows appearing in capacitance and voltage characteristics of diode structures with Pt top electrodes are 1.2V for a Pt/Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2/Si diode, and 3.5 V for a Pt/Bi4Ti3O12/SrTiO3/Ce(0.12)ZT(0.88)O(2)/Si diode. This difference in magnitude may be due to the different growth orientation and strongly anisotropic polarization of Bi4Ti3O12.

引用

收藏

页码：5505 / 5511

页数：7

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