MICROSTRUCTURE OF EPITAXIAL OXIDE THIN-FILM HETEROSTRUCTURES ON SILICON BY PULSED-LASER DEPOSITION

被引：18

作者：

GHONGE, SG

GOO, E

RAMESH, R

HAAKENAASEN, R

FORK, DK

机构：

[1] BELLCORE,RED BANK,NJ 07701

[2] XEROX PALO ALTO RES CTR,PALO ALTO,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of epitaxial La0.5Sr0.5CoO3(LSCO)/ferroelectric lanthanum modified lead zirconate titanate (PLZT)/La0.5Sr0.5CoO3(LSCO)/bismuth titanate(BT)/yttria-stabilized zirconia (YSZ) heterostructures on [001] silicon has been investigated. X-ray diffraction and pole figure analysis reveal epitaxial growth of the PLZT, LSCO, BT, and YSZ layers. High resolution transmission electron microscopy was done to study the crystal defects and interfacial structure.

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页码：3407 / 3409

页数：3

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