EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION

Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23°C using a wet-chemical hydrogen-termination procedure. Epitaxial YBa2Cu3O7-δ films have been grown on these films.