SILICON SURFACE PASSIVATION BY HYDROGEN TERMINATION - A COMPARATIVE-STUDY OF PREPARATION METHODS

被引：196

作者：

FENNER, DB ^{[1
]}

BIEGELSEN, DK ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] UNIV SANTA CLARA,DEPT PHYS,SANTA CLARA,CA 95053

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 01期

关键词：

D O I：

10.1063/1.343839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：419 / 424

页数：6

共 23 条

[1]

ADAMSON AW, 1982, PHYSICAL CHEM SURFAC

[2]

BRIGGS D, 1983, PRACTICAL SURFACE AN

[3] THE BONDING OF ARSENIC TO THE HYDROGEN-TERMINATED SI(111) SURFACE [J].

BRINGANS, RD ;

OLMSTEAD, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1132-1136

[4] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].

BURROWS, VA ;

CHABAL, YJ ;

HIGASHI, GS ;

RAGHAVACHARI, K ;

CHRISTMAN, SB .

APPLIED PHYSICS LETTERS, 1988, 53 (11) :998-1000

[5] NEW ORDERED STRUCTURE FOR THE H-SATURATED SI(100) SURFACE - THE (3X1) PHASE [J].

CHABAL, YJ ;

RAGHAVACHARI, K .

PHYSICAL REVIEW LETTERS, 1985, 54 (10) :1055-1058

[6] SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J].

CHABAL, YJ ;

RAGHAVACHARI, K .

PHYSICAL REVIEW LETTERS, 1984, 53 (03) :282-285

[7] AN X-RAY PHOTOELECTRON-SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION CONTROLLED SURFACE PREPARATION OF SI(100) PRIOR TO EPITAXIAL-GROWTH OF GAAS [J].

CONTOUR, JP ;

MASSIES, J ;

DAVITAYA, FA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :908-910

[8]

FROITZHEIM H, 1984, PHYS REV B, V30, P5771, DOI 10.1103/PhysRevB.30.5771

[9]

Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9

[10]

GRUNTHANER FJ, COMMUNICATION

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