AN X-RAY PHOTOELECTRON-SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION CONTROLLED SURFACE PREPARATION OF SI(100) PRIOR TO EPITAXIAL-GROWTH OF GAAS

被引：3

作者：

CONTOUR, JP ^{[1
]}

MASSIES, J ^{[1
]}

DAVITAYA, FA ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：908 / 910

页数：3

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[9]

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[10] MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100) [J].

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