THE BONDING OF ARSENIC TO THE HYDROGEN-TERMINATED SI(111) SURFACE

被引：5

作者：

BRINGANS, RD ^{[1
]}

OLMSTEAD, MA ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1132 / 1136

页数：5

共 20 条

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[6] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].

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NORTHRUP, JE .

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[7]

EASTMAN DE, 1978, 14TH P INT C PHYS SE, P1059

[8] HYDROGEN INTERACTIONS WITH SI(111) AND SI(100) SURFACES STUDIED BY ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY [J].

FUJIWARA, K .

PHYSICAL REVIEW B, 1982, 26 (04) :2036-2040

[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].

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EASTMAN, DE .

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[10]

KOEHLER BG, 1988, J CHEM PHYS, V89, P1132

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