EPITAXIAL-GROWTH OF FERROELECTRIC BISMUTH TITANATE THIN-FILMS BY PULSED LASER DEPOSITION

被引：123

作者：

RAMESH, R ^{[1
]}

LUTHER, K ^{[1
]}

WILKENS, B ^{[1
]}

HART, DL ^{[1
]}

WANG, E ^{[1
]}

TARASCON, JM ^{[1
]}

INAM, A ^{[1
]}

WU, XD ^{[1
]}

VENKATESAN, T ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,PISCATAWAY,NJ 08574

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.104128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of ferroelectric bismuth titanate Bi 4Ti3O12 have been grown by pulsed laser deposition on single-crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675°C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis, respectively. Its a,b lattice parameters allow thin-film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by x-ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.

引用

页码：1505 / 1507

页数：3

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