Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy

被引:45
作者
Imada, S [1 ]
Shouriki, S [1 ]
Tokumitsu, E [1 ]
Ishiwara, H [1 ]
机构
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12A期
关键词
ferroelectric; Y2O3; YMnO3; molecular beam epitaxy; epitaxial growth; Si;
D O I
10.1143/JJAP.37.6497
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best full-width at half maximum (FWHM) values for Y2O3 and YMnO3 films are 0.4 degrees and 1.5 degrees, respectively. Concerning the electrical properties, capacitance-voltage (C-V) characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.3 V.
引用
收藏
页码:6497 / 6501
页数:5
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