HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON

[1] FUKUMOTO H, UNPUB

[2] FUKUMOTO H, 1988, JPN J APPL PHYS, V27, pL1401

[3] HETEROEPITAXIAL SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 501 - 503

[4] STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 919 - 921

[5] HAMMOD RH, 1987, 1987 P SPRING M MAT, P169

[6] EPITAXIAL-GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1506 - 1508

[7] GROWTH OF CRYSTALLINE ZIRCONIUM DIOXIDE FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2407 - 2409

[8] EPITAXIAL-GROWTH OF BA2YCU3OX THIN-FILM ON EPITAXIAL ZRO2/SI(100) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1068 - L1070

[9] NISHIBAYASHI Y, 1988, MATER RES SOC S P, V116, P363

[1] FUKUMOTO H, UNPUB

[2] FUKUMOTO H, 1988, JPN J APPL PHYS, V27, pL1401

[3] HETEROEPITAXIAL SI FILMS ON YTTRIA-STABILIZED, CUBIC ZIRCONIA SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 501 - 503

[4] STUDY OF THERMALLY OXIDIZED YTTRIUM FILMS ON SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 919 - 921

[5] HAMMOD RH, 1987, 1987 P SPRING M MAT, P169

[6] EPITAXIAL-GROWTH OF YTTRIA-STABILIZED ZIRCONIA FILMS ON SILICON BY ULTRAHIGH-VACUUM ION-BEAM SPUTTER DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1506 - 1508

[7] GROWTH OF CRYSTALLINE ZIRCONIUM DIOXIDE FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2407 - 2409

[8] EPITAXIAL-GROWTH OF BA2YCU3OX THIN-FILM ON EPITAXIAL ZRO2/SI(100) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1068 - L1070

[9] NISHIBAYASHI Y, 1988, MATER RES SOC S P, V116, P363