Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures

被引：72

作者：

Hirai, T ^{[1
]}

Fujisaki, Y ^{[1
]}

Nagashima, K ^{[1
]}

Koike, H ^{[1
]}

Tarui, Y ^{[1
]}

机构：

[1] ASAHI CHEM IND CO LTD,CENT LAB,FUJI,SHIZUOKA 416,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期

关键词：

ferroelectric thin film; MFS-FET; SrBi2Ta2O9 thin film; perovskite; vacuum evaporation; MOD; CeO2;

D O I：

10.1143/JJAP.36.5908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of an n-channel metal/ferroelectric/insulator/semiconductor (MFIS)-Field Effect Transistor (FET) using Al/SrBi2Ta2O9/CeO2/Si(100) structures and its characterization, as well as on the preparation of SrBi2Ta2O9 ferroelectric films at low temperatures. SrBi2Ta2O9 ferroelectric films fabricated at about 650 degrees C on a Pt/SiO2/Si substrate had a remanent polarization (P-r) of 7.8 mu C/cm(2). The drain current-gate voltage (I-D-V-G) characteristics of MFIS-FET using the Al/SrBi2Ta2O9/CeO2/Si(100) structure showed threshold hysteresis due to the ferroelectric properties of the SrBi2Ta2O9 film. Nonvolatile memory operations of the MFIS-FET were demonstrated by observing its drain current (I-D) which was controlled by previously applied write voltages.

引用

页码：5908 / 5911

页数：4

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