New low temperature processing of sol-gel SrBi2Ta2O9 thin films

被引：68

作者：

Ito, Y ^{[1
]}

Ushikubo, M ^{[1
]}

Yokoyama, S ^{[1
]}

Matsunaga, H ^{[1
]}

Atsuki, T ^{[1
]}

Yonezawa, T ^{[1
]}

Ogi, K ^{[1
]}

机构：

[1] MITSUBISHI CORP,CENT RES INST,OMIYA,SAITAMA 330,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9B期

关键词：

ferroelectric thin film; sol-gel; low temperature process; SrBi2Ta2O9; ferroelectric nonvolatile memory;

D O I：

10.1143/JJAP.35.4925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new low temperature processing method for preparation of SrBi2Ta2O9 thin films is proposed. These thin films were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition. The 1st annealing was performed in a 760 Torr oxygen atmosphere at 600 degrees C for 30min, and the 2nd annealing was performed in a 5 Torr oxygen atmosphere at 600 degrees C for 30min. The films were well crystallized and fine grained after the 2nd annealing. The electrical properties of the 200-nm-thick film obtained using this new processing method, i.e., the remanent polarization (P-r), coercive field (E(c)), and leakage current density (I-L), were as follows: P-r = 8.5 mu C/cm(2) E(c) = 30kV/cm, and I-L = 1 x 10(-7)A/cm(2) (at 150kV/cm). This new processing method is very attractive for highly integrated ferroelectric nonvolatile memory applications.

引用

页码：4925 / 4929

页数：5

共 16 条

[1] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS [J].