Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

被引:46
作者
Hunter, ME
Reed, MJ
El-Masry, NA
Roberts, JC
Bedair, SM [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
D O I
10.1063/1.126217
中图分类号
O59 [应用物理学];
学科分类号
摘要
Y2O3 has a relatively high dielectric constant (13-17) leading to several potential applications. In this work, pulsed-laser deposition was used to grow epitaxial Y2O3 films on Si(111) substrates. Structural characterization indicated two-dimensional growth without the formation of an amorphous interfacial layer. Annealing in either Ar or O-2 was found to induce an O-2 diffusion reaction resulting in the formation of two interfacial amorphous layers. Electrical characterization by capacitance-voltage and current-voltage indicated that the as-grown samples were poor insulating films. Annealing the samples improved the electrical performance by lowering leakage currents and exhibiting inversion during capacitance-voltage testing. This epitaxial growth points toward the possibility of the heteroepitaxial growth of silicon on insulator device structures. (C) 2000 American Institute of Physics. [S0003-6951(00)02613-9].
引用
收藏
页码:1935 / 1937
页数:3
相关论文
共 8 条
[1]   REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE [J].
CHIKYOW, T ;
BEDAIR, SM ;
TYE, L ;
ELMASRY, NA .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :1030-1032
[2]  
CHIKYOW T, 1993, MATER RES SOC S P, V318, P551
[3]   Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer [J].
Choi, SC ;
Cho, MH ;
Whangbo, SW ;
Whang, CN ;
Kang, SB ;
Lee, SI ;
Lee, MY .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :903-905
[4]   HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON [J].
FUKUMOTO, H ;
IMURA, T ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1989, 55 (04) :360-361
[5]   GROWTH OF BUFFER LAYERS ON SI SUBSTRATE FOR HIGH-TC SUPERCONDUCTING THIN-FILMS [J].
HARADA, K ;
NAKANISHI, H ;
ITOZAKI, H ;
YAZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :934-938
[6]   SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].
ISHIWARA, H ;
ASANO, T .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68
[7]   STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR DIODES BASED ON Y2O3 DIELECTRIC THIN-FILMS ON SILICON [J].
RASTOGI, AC ;
SHARMA, RN .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :5041-5052
[8]  
TYE L, 1994, MATER RES SOC S P, V341, P551