GROWTH OF BUFFER LAYERS ON SI SUBSTRATE FOR HIGH-TC SUPERCONDUCTING THIN-FILMS

We have investigated the crystalline properties and surface morphology of the buffer layers of Y2O3, ZrO2 and Y2O3/ZrO2 on a Si(100) substrate for a superconducting thin film. The results of RHEED and X-ray diffraction indicate the hetero-epitaxial growth of buffer layers on Si(100) substrates. Epitaxial planes of the buffer layers on the Si(100) surface are (110), (100) and (100)/(100) for Y2O3, ZrO2 and Y2O3/ZrO2, respectively. YBa2Cu3O7-x thin films have been grown on Si with each buffer layer. The highest critical temperature obtained was 88 K on the Si with the Y2O3/ZrO2 buffer layer.