EPITAXIAL MGO ON SI(001) FOR Y-BA-CU-O THIN-FILM GROWTH BY PULSED LASER DEPOSITION

被引：237

作者：

FORK, DK ^{[1
]}

PONCE, FA ^{[1
]}

TRAMONTANA, JC ^{[1
]}

GEBALLE, TH ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7-delta/BaTiO3 thin films on Si with a critical current density of 6.7 x 10(5) A/cm2 at 77 K.

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页码：2294 / 2296

页数：3

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