ADSORPTION OF AL ON CLEAVED SI(111) AT ROOM-TEMPERATURE

被引：33

作者：

CHEN, P ^{[1
]}

BOLMONT, D ^{[1
]}

SEBENNE, CA ^{[1
]}

机构：

[1] UNIV PARIS 06, CNRS, PHYS SOLIDE LAB, F-75230 PARIS 05, FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 27期

关键词：

D O I：

10.1088/0022-3719/17/27/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4897 / 4905

页数：9

共 23 条

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[2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG [J].

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CHEN, P ;

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PROIX, F .

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[3]

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[5]

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[6]

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[8] STRUCTURE AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON GE ADSORPTION [J].

CHEN, P ;

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SEBENNE, C .

SOLID STATE COMMUNICATIONS, 1982, 44 (08) :1191-1193

[9] A STUDY OF SCHOTTKY-BARRIER FORMATION FOR GA-SI(111)-(2X1) AND SB-SI(111)-(2X1) INTERFACES [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :681-684

[10] ELECTRONIC AND ATOMIC-STRUCTURE OF SI(111) AL, AG, AND NI METAL OVERLAYER INDUCED SURFACE RECONSTRUCTIONS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :550-555

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