SiO2 valence band near the SiO2/Si(111) interface

被引：23

作者：

Nohira, H

Hattori, T

机构：

[1] Dept. of Elec. and Electron. Eng., Musashi Institute of Technology, Tokyo 158, 1-28-1 Tamazutsumi, Setagaya-ku

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

valence band formation; silicon dioxide; valence band discontinuity; SiO2/Si interface; XPS;

D O I：

10.1016/S0169-4332(97)80063-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The changes in X-ray excited valence bands of silicon oxide with progress of oxidation of a Si(111) surface in 1 Torr dry oxygen at 600-800 degrees C were studied at initial stage of oxidation. The following results were obtained: (1) the energy level of the top of the valence band within 0.9 nm from the interface is different from that of the bulk silicon oxide by about 0.2 eV and (2) the valence band discontinuity at the interface changes periodically with the interface structures.

引用

页码：119 / 122

页数：4

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