PERIODIC CHANGES IN SIO2/SI(111) INTERFACE STRUCTURES WITH PROGRESS OF THERMAL-OXIDATION

被引：117

作者：

OHISHI, K

HATTORI, T

机构：

[1] Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Setagaya-ku, Tokyo, 158

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5A期

关键词：

SIO2/SI INTERFACE; INTERFACE FORMATION; THERMAL OXIDATION; OXIDATION MECHANISM; LAYER-BY-LAYER OXIDATION; X-RAY PHOTOELECTRON SPECTRA;

D O I：

10.1143/JJAP.33.L675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in SiO2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800-degrees-C in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800-degrees-C, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.

引用

页码：L675 / L678

页数：4

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