INITIAL-STAGE OF SIO2 SI INTERFACE FORMATION ON SI(111) SURFACE

被引：19

作者：

HATTORI, T

NOHIRA, H

TAMURA, Y

OGAWA, H

机构：

[1] Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tokyo, 158, 1-28-1 Tamazutsumi, Setagaya-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期

关键词：

OXIDATION; SILICON OXIDE; H-TERMINATION; SIO2 SI INTERFACE; XPS;

D O I：

10.1143/JJAP.31.L638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300-degrees-C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

引用

页码：L638 / L641

页数：4

共 10 条

[1] THE SI-SIO2 INTERFACE - CORRELATION OF ATOMIC-STRUCTURE AND ELECTRICAL-PROPERTIES [J].

HAHN, PO ;

HENZLER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (02) :574-583

[2] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[3] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[4] THE EVOLUTION OF SILICON-WAFER CLEANING TECHNOLOGY [J].

KERN, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) :1887-1892

[5] SUBSTRATE-TEMPERATURE DEPENDENCE OF THE INITIAL GROWTH MODE OF SIO2 ON SI(100)-(2X1) EXPOSED TO O-2 - A PHOTOEMISSION-STUDY [J].

LUTZ, F ;

BISCHOFF, JL ;

KUBLER, L ;

BOLMONT, D .

PHYSICAL REVIEW B, 1989, 40 (15) :10356-10361

[6]

MORIMOTO T, 1991, 1991 INT C SOL STAT, P23

[7] DEPENDENCE OF THIN-OXIDE FILMS QUALITY ON SURFACE MICROROUGHNESS [J].

OHMI, T ;

MIYASHITA, M ;

ITANO, M ;

IMAOKA, T ;

KAWANABE, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :537-545

[8] ELECTRON-SPECTROSCOPY FOR ATOMS, MOLECULES AND CONDENSED MATTER - AN OVERVIEW [J].

SIEGBAHN, K .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1985, 36 (02) :113-129

[9] THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].

TAKAHAGI, T ;

NAGAI, I ;

ISHITANI, A ;

KURODA, H ;

NAGASAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3516-3521

[10] EFFECT OF SILICON-WAFER INSITU CLEANING ON THE CHEMICAL-STRUCTURE OF ULTRATHIN SILICON-OXIDE FILM [J].

TERADA, N ;

OGAWA, H ;

MORIKI, K ;

TERAMOTO, A ;

MAKIHARA, K ;

MORITA, M ;

OHMI, T ;

HATTORI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3584-3589

← 1 →