SUBSTRATE-TEMPERATURE DEPENDENCE OF THE INITIAL GROWTH MODE OF SIO2 ON SI(100)-(2X1) EXPOSED TO O-2 - A PHOTOEMISSION-STUDY

被引：32

作者：

LUTZ, F

BISCHOFF, JL

KUBLER, L

BOLMONT, D

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.40.10356

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10356 / 10361

页数：6

共 16 条

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