GENERAL COMPARISON OF THE SURFACE PROCESSES INVOLVED IN NITRIDATION OF SI(100)-2X1 BY NH3 AND IN SINX FILM DEPOSITION - A PHOTOEMISSION-STUDY

被引：104

作者：

KUBLER, L

BISCHOFF, JL

BOLMONT, D

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.13113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：13113 / 13123

页数：11

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[1] LOW-TEMPERATURE NITRIDATION AND HYDROGENATION OF SI FILMS WITH NH3 - A PHOTOEMISSION-STUDY
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[6] ELECTRON ENERGY-LOSS SPECTRA OF SI(111) REACTED WITH NITROGEN-ATOMS
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[7] CHARACTERIZATION OF AMORPHOUS SIOX LAYERS WITH ESCA
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[J]. SURFACE SCIENCE, 1985, 162 (1-3) : 671 - 679
[8] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308
[9] KINETICS OF SI(100) NITRIDATION 1ST STAGES BY AMMONIA - ELECTRON-BEAM-INDUCED THIN-FILM GROWTH AT ROOM-TEMPERATURE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 985 - 991
[10] IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001)
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[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (18) : 2071 - 2074

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