LOW-PRESSURE OXIDATION OF SILICON STIMULATED BY LOW-ENERGY ELECTRON-BOMBARDMENT

被引：30

作者：

COLLOT, P ^{[1
]}

GAUTHERIN, G ^{[1
]}

AGIUS, B ^{[1
]}

RIGO, S ^{[1
]}

ROCHET, F ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 06期

关键词：

D O I：

10.1080/13642818508238950

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1051 / 1069

页数：19

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