ISOTOPE LABELING STUDIES OF THE OXIDATION OF SILICON AT 1000-DEGREES-C AND 1300-DEGREES-C

被引：74

作者：

COSTELLO, JA ^{[1
]}

TRESSLER, RE ^{[1
]}

机构：

[1] PENN STATE UNIV, DEPT MAT SCI & ENGN, UNIVERSITY PK, PA 16802 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

10.1149/1.2115997

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1944 / 1947

页数：4

共 15 条

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