AES STUDY OF THE LOW-PRESSURE OXIDATION OF SI(100) - ELECTRON-BEAM EFFECTS

被引：32

作者：

CARRIERE, B ^{[1
]}

CHOUIYAKH, A ^{[1
]}

LANG, B ^{[1
]}

机构：

[1] UNIV STRASBOURG 1, F-67070 STRASBOURG, FRANCE

来源：

SURFACE SCIENCE | 1983年 / 126卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(83)90748-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：495 / 501

页数：7

共 11 条

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[7]

LANG B, 1981, J MICROSC SPECT ELEC, V6, P131

[8] AES STUDY OF SILICON BONDING STATES DURING OXIDATION OF SI(111) [J].

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[9] OXIDE FORMATION ON THE SILICON (111) SURFACE STUDIED BY AUGER-ELECTRON SPECTROSCOPY AND BY LOW-ENERGY ELECTRON LOSS SPECTROSCOPY [J].

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HEZEL, R .

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[10]

RAIDER SI, 1978, IBM J RES DEV, V22, P214

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