SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES

被引：94

作者：

DERRIEN, J ^{[1
]}

COMMANDRE, M ^{[1
]}

机构：

[1] FAC SCI LUMINY,CNRS,DEPT PHYS,ERA 899,F-13288 MARSEILLE 9,FRANCE

来源：

SURFACE SCIENCE | 1982年 / 118卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(82)90011-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：32 / 46

页数：15

相关论文

共 63 条

[1] ABOAF JA, 1971, J ELECTROCHEM SOC, V118, P1371
[2] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS
ADAMS, AC
SMITH, TE
CHANG, CC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1787 - 1794
[3] EFFECT OF PRESSURE AND TEMPERATURE ON CHANGES IN WORK FUNCTION OF ALUMINUM DURING INTERACTION WITH OXYGEN
AGARWALA, VK
FORT, T
[J]. SURFACE SCIENCE, 1975, 48 (02) : 527 - 536
[4] OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1046 - 1050
[5] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
BLANC, J
BUIOCCHI, CJ
ABRAHAMS, MS
HAM, WE
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 120 - 122
[6] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN
BLANC, J
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426
[7] Cabrera N., 1949, REP PROG PHYS, V12, P308
[8] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY
CARRIERE, B
DEVILLE, JP
[J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286
[9] CARRIERE B, 1978, J MICROSC SPECT ELEC, V3, P225
[10] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING
CHEUNG, NW
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 859 - 861

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