INTERMEDIATE OXIDATION-STATE OF SI(111) - CORE PHOTOELECTRON ABSORPTION VS CHEMICAL-SHIFTS

被引：14

作者：

BAUER, RS

BACHRACH, RZ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：509 / 510

页数：2

共 12 条

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[2] BAUER R, UNPUBLISHED
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[4] EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES
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[5] BAUER RS, 1978, PHYSICS SIO2 ITS INT, P401
[6] BIANCONI A, SURF SCI
[7] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
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[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956
[8] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
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[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686
[9] NEW STUDIES OF SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
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[10] STATISTICAL INVESTIGATIONS OF THE STRUCTURE OF SIOX
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