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NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS
被引:58
作者
:
DELORD, JF
论文数:
0
引用数:
0
h-index:
0
DELORD, JF
SCHROTT, AG
论文数:
0
引用数:
0
h-index:
0
SCHROTT, AG
FAIN, SC
论文数:
0
引用数:
0
h-index:
0
FAIN, SC
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1980年
/ 17卷
/ 01期
关键词
:
D O I
:
10.1116/1.570498
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:517 / 520
页数:4
相关论文
共 29 条
[1]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[2]
STUDY OF NITRIDATION OF SILICON SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION AND AUGE ELECTRON SPECTROSCOPY
HECKINGBOTTOM, R
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT, LONDON NW2 7DT, ENGLAND
PO RES DEPT, LONDON NW2 7DT, ENGLAND
HECKINGBOTTOM, R
WOOD, PR
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT, LONDON NW2 7DT, ENGLAND
PO RES DEPT, LONDON NW2 7DT, ENGLAND
WOOD, PR
[J].
SURFACE SCIENCE,
1973,
36
(02)
: 594
-
605
[3]
HECKINGBOTTOM R, 1969, STRUCTURE CHEM SOLID
[4]
HECKINGBOTTOM R, 1977, J ELECTROCHEM SOC, V124, P419
[5]
HOFMANN S, 1974, POWDER METALL INT, V6, P90
[6]
QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON
HOLLOWAY, PH
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HOLLOWAY, PH
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(05)
: 723
-
728
[7]
CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE
HOLLOWAY, PH
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HOLLOWAY, PH
[J].
SURFACE SCIENCE,
1976,
54
(02)
: 506
-
508
[8]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
: 448
-
452
[9]
MOLECULAR-STRUCTURE, MICROSTRUCTURE, MACROSTRUCTURE AND PROPERTIES OF SILICON-NITRIDE
JENNINGS, HM
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
JENNINGS, HM
EDWARDS, JO
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
EDWARDS, JO
RICHMAN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
RICHMAN, MH
[J].
INORGANICA CHIMICA ACTA,
1976,
20
(02)
: 167
-
181
[10]
AUGER DEPTH PROFILING OF MNOS STRUCTURES BY ION SPUTTERING
JOHANNESSEN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
JOHANNESSEN, JS
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HELMS, CR
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
STRAUSSER, YE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STRAUSSER, YE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(05)
: 547
-
551
←
1
2
3
→
共 29 条
[1]
EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1957,
28
(12)
: 1510
-
1511
[2]
STUDY OF NITRIDATION OF SILICON SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION AND AUGE ELECTRON SPECTROSCOPY
HECKINGBOTTOM, R
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT, LONDON NW2 7DT, ENGLAND
PO RES DEPT, LONDON NW2 7DT, ENGLAND
HECKINGBOTTOM, R
WOOD, PR
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT, LONDON NW2 7DT, ENGLAND
PO RES DEPT, LONDON NW2 7DT, ENGLAND
WOOD, PR
[J].
SURFACE SCIENCE,
1973,
36
(02)
: 594
-
605
[3]
HECKINGBOTTOM R, 1969, STRUCTURE CHEM SOLID
[4]
HECKINGBOTTOM R, 1977, J ELECTROCHEM SOC, V124, P419
[5]
HOFMANN S, 1974, POWDER METALL INT, V6, P90
[6]
QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON
HOLLOWAY, PH
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HOLLOWAY, PH
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
STEIN, HJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(05)
: 723
-
728
[7]
CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE
HOLLOWAY, PH
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
HOLLOWAY, PH
[J].
SURFACE SCIENCE,
1976,
54
(02)
: 506
-
508
[8]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
: 448
-
452
[9]
MOLECULAR-STRUCTURE, MICROSTRUCTURE, MACROSTRUCTURE AND PROPERTIES OF SILICON-NITRIDE
JENNINGS, HM
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
JENNINGS, HM
EDWARDS, JO
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
EDWARDS, JO
RICHMAN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
RICHMAN, MH
[J].
INORGANICA CHIMICA ACTA,
1976,
20
(02)
: 167
-
181
[10]
AUGER DEPTH PROFILING OF MNOS STRUCTURES BY ION SPUTTERING
JOHANNESSEN, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
JOHANNESSEN, JS
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HELMS, CR
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
STRAUSSER, YE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STRAUSSER, YE
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(05)
: 547
-
551
←
1
2
3
→